Datasheet PBRN123ET - NXP TRANSISTOR, NPN, 40 V, 0.8 A, SOT-23 — 数据表
Part Number: PBRN123ET
详细说明
Manufacturer: NXP
Description: TRANSISTOR, NPN, 40 V, 0.8 A, SOT-23
Docket:
PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 2.2 k
Rev.
01 -- 27 February 2007 Product data sheet
1. Product profile
1.1 General description
Specifications:
- Collector Emitter Voltage V(br)ceo: 40 V
- Collector Emitter Voltage Vces: -1.15 V
- Continuous Collector Current Ic Max: 800 mA
- Current Ic Continuous a Max: 800 mA
- DC Current Gain Min: 350
- Mounting Type: SMD
- Operating Temperature Range: -65°C to +150°C
- Package / Case: SOT-23 (TO-236)
- Power Dissipation Pd: 250 mW
- Resistance R1: 2.2 kOhm
- Resistance R2: 2.2 kOhm
- SVHC: No SVHC (18-Jun-2010)
- Transistor Case Style: SOT-23
- Transistor Polarity: NPN
- Transistor Type: General Purpose
RoHS: Yes
Accessories:
- Roth Elektronik - RE901