Datasheet BUT11A - NXP TRANSISTOR, NPN, TO-220AB — 数据表

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Manufacturer: NXP

Description: TRANSISTOR, NPN, TO-220AB

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
BUT11; BUT11A Silicon diffused power transistors
Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13
Philips Semiconductors

Specifications:

• Collector Emitter Voltage V(br)ceo: 450 V
• Collector Emitter Voltage Vces: 1.5 V
• Continuous Collector Current Ic Max: 5 A
• Current Ic Continuous a Max: 5 A
• DC Collector Current: 5 A
• DC Current Gain Max: 35
• DC Current Gain Min: 10
• DC Current Gain Typ: 20
• DC Current Gain: 500 mA
• Fall Time @ Ic: 0.8 µs
• Lead Spacing: 2.54 mm
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• Package / Case: TO-220AB
• Power Dissipation Pd: 100 W
• Power Dissipation Ptot Max: 100 W
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: TO-220AB
• Transistor Polarity: NPN
• Voltage Vces: 1 kV

RoHS: Yes

Accessories:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLK 5