Datasheet PBSS4140V - NXP TRANSISTOR, NPN, SOT-666 — 数据表

NXP PBSS4140V

Part Number: PBSS4140V

详细说明

Manufacturer: NXP

Description: TRANSISTOR, NPN, SOT-666

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 40 V
  • Collector Emitter Voltage Vces: 110 mV
  • Continuous Collector Current Ic Max: 1 A
  • Current Ic @ Vce Sat: 500 mA
  • Current Ic Continuous a Max: 1 A
  • DC Collector Current: 1 A
  • DC Current Gain Min: 300
  • DC Current Gain: 500 mA
  • Full Power Rating Temperature: 25°C
  • Gain Bandwidth ft Min: 150 MHz
  • Gain Bandwidth ft Typ: 150 MHz
  • Mounting Type: SMD
  • Number of Pins: 6
  • Operating Temperature Range: -65°C to +125°C
  • Package / Case: SOT-666
  • Power Dissipation Pd: 300 mW
  • Power Dissipation Ptot Max: 300 mW
  • SMD Marking: 22
  • SVHC: No SVHC (18-Jun-2010)
  • Transistor Case Style: SOT-666
  • Transistor Polarity: NPN
  • Voltage Vcbo: 40 V

RoHS: Yes

Accessories:

  • Electrolube - SMA10SL
  • LICEFA - V11-7-6-10
  • LICEFA - V11-7