Datasheet 2N3584 - NTE Electronics SILICON NPN TRANSISTOR, 250 V, 2 A, TO-66 — 数据表

NTE Electronics 2N3584

Part Number: 2N3584

详细说明

Manufacturer: NTE Electronics

Description: SILICON NPN TRANSISTOR, 250 V, 2 A, TO-66

data sheetDownload Data Sheet

Docket:
NTE384 Silicon NPN Transistor High Voltage Power Amp/Switch
Description: The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple­emitter site structure.

Multiple­epitaxial construction maximizes the volt­ampere characteristic of the device and provides fast switching speeds. Multiple­emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe­operation­area. The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line. The leakage current is specified at 450V; therefore the device can also be used in a series bridge configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in inverter applications. Features: D Maximum Safe­Area­of­Operation D Low Saturation Voltages D High Voltage Rating: VCER(sus) = 375V D High Dissipation Rating: PT = 45W Absolute Maximum Ratings: Collector­Base Voltage, VCBO . . . . .

Specifications:

  • Collector Emitter Voltage V(br)ceo: 250 V
  • DC Collector Current: 5 A
  • DC Current Gain: 100
  • Operating Temperature Range: -65°C to +200°C
  • Power Dissipation: 35 W
  • Transistor Polarity: NPN
  • RoHS: Yes