Datasheet Multicomp 2N3906 — 数据表

2N3906
Low Power Bipolar Transistors
Features:
• PNP Silicon Planar Switching Transistors.
• General Purpose Switching and Amplifier Applications. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F
G
H
K 5°
1.40 1.14 1.53 12.70 Dimensions : Millimetres Pin Configuration:
1. Collector
2. Base
3. Emitter Page 12/05/08 V1.1 2N3906
Low Power Bipolar Transistors
Absolute Maximum Ratings (Ta = 25°C unless otherwise specified)
Description Symbol Value Unit Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO 5.0 IC 200 mA 625
5.0 mW
mW/°C 1.5
12 W
mW/°C Tj, Tstg -55 to +150 °C Junction to Case Rth (j-c) 125 Junction to Ambient Rth (j-a) 200 Collector Current Continuous
Power Dissipation at Ta = 25°C
Derate above 25°C 40 V PD Power Dissipation at Tc = 25°C
Derate above 25°C
Operating and Storage JunctionTemperature Range …