Datasheet ZXTN2007GTA - Diodes TRANSISTOR, NPN, SOT-223 — 数据表

Diodes ZXTN2007GTA

Part Number: ZXTN2007GTA

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-223

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Docket:
ZXTN2007G
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION
Packaged in the SOT223 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
FEATURES

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 40 V
  • Collector Emitter Voltage Vces: 35 mV
  • Current Ic Continuous a Max: 6.5 A
  • Gain Bandwidth ft Typ: 140 MHz
  • Hfe Min: 100
  • Mounting Type: SMD
  • Package / Case: SOT-223
  • Power Dissipation: 1.6 W
  • SVHC: No SVHC (18-Jun-2010)
  • Transistor Case Style: SOT-223
  • Transistor Polarity: NPN
  • Transistor Type: Bipolar

RoHS: Yes