Datasheet ZXTN25100BFH - Diodes TRANSISTOR, NPN, SOT-23 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-23

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Docket:
ZXTN25100BFH 100V, SOT23, medium power transistor
Summary
BVCEX > 170V BVCEO > 100V BVECO > 6V IC(cont) = 3A VCE(sat) < 80mV @ 1A RCE(sat) = 67m PD = 1.25W Complementary part number ZXTP25100BFH
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor.

The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• Collector Emitter Voltage Vces: 55 mV
• Continuous Collector Current Ic Max: 3 A
• Current Gain Hfe Max: 300
• Current Ic Continuous a Max: 3 A
• Current Ic hFE: 10 mA
• Current Ic hfe -Do Not Use See ID 1182: 10 mA
• DC Current Gain Hfe Max: 300
• DC Current Gain Hfe Min: 100
• Gain Bandwidth ft Typ: 160 MHz
• Hfe Min: 100
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Package / Case: SOT-23
• Power Dissipation Pd: 1.25 W
• Power Dissipation Ptot Max: 1.25 W
• SMD Marking: 021
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 8 mm
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN
• Voltage Vcbo: 170 V

RoHS: Yes