Datasheet ZXTP25020DFLTA - Diodes TRANSISTOR, PNP, SOT-23 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, PNP, SOT-23

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Docket:
ZXTP25020DFL 20V, SOT23, PNP low power transistor
Summary
BVCEO > -20V BVECO > -4V IC(cont) = 1.5A VCE(sat) < 85 mV @ 1A RCE(sat) = 54m PD = 350mW Complementary part number ZXTN25020DFL
Description
Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 20 V
• Collector Emitter Voltage Vces: 195 mV
• Continuous Collector Current Ic Max: 1.5 A
• Current Ib: 500 mA
• Current Ic Continuous a Max: 4 A
• Current Ic hFE: 1.5 A
• DC Collector Current: 4 A
• DC Current Gain hFE: 450
• Gain Bandwidth ft Typ: 290 MHz
• Hfe Min: 160
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 350 mW
• Power Dissipation Ptot Max: 350 mW
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-23
• Transistor Polarity: PNP
• Turn Off Time: 32.7 ns
• Turn On Time: 16.3 ns
• Voltage Vcbo: 25 V

RoHS: Yes

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