Datasheet ZXTN25040DFLTA - Diodes TRANSISTOR, NPN, SOT-23 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-23

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Docket:
ZXTN25040DFL 40V, SOT23, NPN low power transistor
Summary
BVCEX > 130V BVCEO > 40V BVECO > 6V IC(cont) = 1.5A VCE(sat) < 85mV @ 1A RCE(sat) = 59m PD = 350mW Complementary part number ZXTP25040DFL
Description
Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 40 V
• Collector Emitter Voltage Vces: 185 mV
• Continuous Collector Current Ic Max: 1.5 A
• Current Ib: 500 mA
• Current Ic Continuous a Max: 4 A
• Current Ic hFE: 1.5 A
• DC Collector Current: 4 A
• DC Current Gain hFE: 450
• Gain Bandwidth ft Typ: 190 MHz
• Hfe Min: 170
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 350 mW
• Power Dissipation Ptot Max: 350 mW
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN
• Turn Off Time: 130 ns
• Turn On Time: 108 ns
• Voltage Vcbo: 130 V

RoHS: Yes

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