Datasheet MMBT5551-7-F - Diodes TRANSISTOR, NPN, 160 V, 0.6 A, SOT23-3 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN, 160 V, 0.6 A, SOT23-3

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Docket:
MMBT5551
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
· · · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT5401) Ideal for Low Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 3)

Specifications:

• Collector Emitter Voltage V(br)ceo: 160 V
• DC Collector Current: 600 mA
• DC Current Gain: 80
• Gain Bandwidth ft Typ: 300 MHz
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 300 mW
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN

RoHS: Yes

其他名称:

MMBT55517F, MMBT5551 7 F