Datasheet FZT653 - Diodes TRANSISTOR, NPN, SOT-223 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-223

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Docket:
SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE PARTMARKING DETAIL FZT753
FZT653
C
E FZT653 B C

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• Collector Emitter Voltage Vces: 300 mV
• Continuous Collector Current Ic Max: 2 A
• Current Ic Continuous a Max: 2 A
• Current Ic hFE: 500 mA
• DC Collector Current: 2 A
• DC Current Gain hFE: 200
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 140 MHz
• Gain Bandwidth ft Typ: 175 MHz
• Hfe Min: 100
• Mounting Type: SMD
• Number of Pins: 4
• Number of Transistors: 1
• Package / Case: SOT-223
• Power Dissipation Pd: 2 W
• Power Dissipation Ptot Max: 2 W
• Pulsed Current Icm: 6 A
• SMD Marking: FZT653
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-223
• Transistor Polarity: NPN
• Voltage Vcbo: 120 V

RoHS: Yes