Datasheet FZT649 - Diodes TRANSISTOR, NPN, SOT-223 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-223

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Docket:
SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
ISSUE 4 FEBRUARY 1996 FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A COMPLEMENTARY TYPE PARTMARKING DETAIL PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL MIN.

35 V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 75 15 150 0.12 0.40 0.9 0.8 200 200 150 50 240 25 55 300 25 5 0.1 10 0.1 0.3 0.6 1.25 1.0 300 MHz 50 pF ns ns FZT749
FZT649
C
E C B

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 25 V
• Collector Emitter Voltage Vces: 300 mV
• Continuous Collector Current Ic Max: 3 A
• Current Ic Continuous a Max: 3 A
• Current Ic hFE: 1 A
• DC Collector Current: 3 A
• DC Current Gain hFE: 200
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 150 MHz
• Gain Bandwidth ft Typ: 240 MHz
• Hfe Min: 100
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 2 W
• Power Dissipation Ptot Max: 2 W
• Pulsed Current Icm: 8 A
• SMD Marking: FZT649
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-223
• Transistor Polarity: NPN
• Voltage Vcbo: 35 V

RoHS: Yes

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