Datasheet FMMT560 - Diodes TRANSISTOR, PNP, SOT-23 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, PNP, SOT-23

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Docket:
SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ISSUE 1 ­ NOVEMBER 1998 FEATURES * Excellent hFE characterisristics up to IC=50mA * Low Saturation voltages
FMMT560
C PARTMARKING DETAIL ­ 560 B
E

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 500 V
• Collector Emitter Voltage Vces: -200 mV
• Continuous Collector Current Ic Max: 150 mA
• Current Ic Continuous a Max: 150 mA
• Current Ic hFE: 50 mA
• DC Collector Current: 150 mA
• DC Current Gain hFE: 100
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 60 MHz
• Gain Bandwidth ft Typ: 60 MHz
• Hfe Min: 80
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 500 mW
• Power Dissipation Ptot Max: 500 mW
• SMD Marking: 560
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 8 mm
• Transistor Case Style: SOT-23
• Transistor Polarity: PNP
• Voltage Vcbo: 500 V

RoHS: Yes