Datasheet FMMT558 - Diodes TRANSISTOR, PNP, SOT-23 — 数据表

详细说明

Manufacturer: Diodes

Description: TRANSISTOR, PNP, SOT-23

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Docket:
SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ISSUE 3 JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE FMMT458 PARTMARKING DETAIL 558
FMMT558
E
C B

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 400 V
• Collector Emitter Voltage Vces: -200 mV
• Continuous Collector Current Ic Max: 150 mA
• Current Ic Continuous a Max: 150 mA
• Current Ic hFE: 50 mA
• DC Collector Current: -500 mA
• DC Current Gain hFE: 100
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 50 MHz
• Gain Bandwidth ft Typ: 50 MHz
• Hfe Min: 100
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Package / Case: SOT-23
• Power Dissipation Pd: 500 mW
• Power Dissipation Ptot Max: 350 mW
• SMD Marking: 558
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 8 mm
• Transistor Case Style: SOT-23
• Transistor Polarity: PNP
• Voltage Vcbo: 400 V

RoHS: Yes