Datasheet SEMIX653GB176HDS - Semikron IGBT MODULE, 2X1700V — 数据表

Semikron SEMIX653GB176HDS

Part Number: SEMIX653GB176HDS

详细说明

Manufacturer: Semikron

Description: IGBT MODULE, 2X1700V

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Docket:
SEMiX 653GB176HDs
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMiX® 3s Trench IGBT Modules
SEMiX 653GB176HDs SEMiX 653GAL176HDs SEMiX 653GAR176HDs Preliminary Data Module Inverse Diode
Features

Specifications:

  • Av Current Ic: 650 A
  • Collector Emitter Voltage V(br)ceo: 1.2 V
  • Collector Emitter Voltage Vces: 2.45 V
  • Current Ic Continuous a Max: 650 A
  • DC Collector Current: 619 A
  • Forward Surge Current Ifsm Max: 2900 A
  • Mounting Type: Screw
  • Number of Pins: 16
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SEMiX 3s
  • Pulsed Current Icm: 900 A
  • Repetitive Reverse Voltage Vrrm Max: 1700 V
  • Rise Time: 90 ns
  • Transistor Case Style: SEMiX 3s
  • Transistor Polarity: N Channel
  • Transistor Type:
  • Voltage Vces: 1700 V

RoHS: Yes