Datasheet FZ1000R33HE3 - Infineon IGBT, HI PO, 1 S/W, 3300 V, 1000 A — 数据表

Infineon FZ1000R33HE3

Part Number: FZ1000R33HE3

详细说明

Manufacturer: Infineon

Description: IGBT, HI PO, 1 S/W, 3300 V, 1000 A

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Docket:
! # ( ) * + , !
"
(-./ 0 !! 1- 234 0
( 5 , 1-67 0
5

Specifications:

  • Collector Emitter Voltage V(br)ceo: 3.3 kV
  • Collector Emitter Voltage Vces: 2.55 V
  • DC Collector Current: 1000 A
  • Module Configuration: Dual
  • Number of Pins: 7
  • Operating Temperature Range: -50°C to +150°C
  • Power Dissipation Max: 9.6 kW
  • Transistor Case Style: Module
  • Transistor Polarity: N Channel

RoHS: Yes

Accessories:

  • DAVICO - D 25-10
  • TE Connectivity - 0-0160170-0