Datasheet 2MBI100S-120-50 - Fuji Electric IGBT, DUAL, MODULE, 100 A, 1200 V, NPT — 数据表

Fuji Electric 2MBI100S-120-50

Part Number: 2MBI100S-120-50

详细说明

Manufacturer: Fuji Electric

Description: IGBT, DUAL, MODULE, 100 A, 1200 V, NPT

data sheetDownload Data Sheet

Docket:
2MBI 100S-120
IGBT MODULE ( S-Series ) s Features
· NPT-Technology · Square SC SOA at 10 x IC · High Short Circuit Withstand-Capability · Small Temperature Dependence of the Turn-Off Switching Loss · Low Losses And Soft Switching
2-Pack IGBT 1200V 2x100A
s Outline Drawing

Specifications:

  • Collector Emitter Voltage V(br)ceo: 1.2 kV
  • Collector Emitter Voltage Vces: 2.6 V
  • Current Ic @ Vce Sat: 100 A
  • Current Ic Continuous a Max: 150 A
  • Current Temperature: 25°C
  • DC Collector Current: 150 A
  • External Depth: 62 mm
  • External Length / Height: 30 mm
  • External Width: 108 mm
  • Fall Time tf: 450 ns
  • Full Power Rating Temperature: 25°C
  • Isolation Voltage: 2.5 kV
  • Junction Temperature Tj Max: 150°C
  • Module Configuration: Dual
  • Mounting Type: Screw
  • Number of Pins: 7
  • Number of Transistors: 2
  • Package / Case: M234
  • Power Dissipation Max: 780 W
  • Power Dissipation: 780 W
  • Pulsed Current Icm: 300 A
  • Rise Time: 350 ns
  • Transistor Case Style: Module
  • Transistor Polarity: N Channel
  • Voltage Vces: 1.2 kV

RoHS: Yes

其他名称:

2MBI100S12050, 2MBI100S 120 50