Datasheet STMicroelectronics BD682 — 数据表

BD6xxx
Complementary power Darlington transistors
Features . ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode Applications
3 ■ Linear and switching industrial equipment 2 1 SOT-32 Description
The devices are manufactured in planar base
island technology with monolithic Darlington
configuration. Figure 1. Internal schematic diagram R1 typ.= 15 KΩ Table 1. R2 typ.= 100 Ω Device summary Order codes Marking BD677 BD677 BD677A BD677A BD678 BD678 BD678A BD678A BD679 BD679 BD679A BD679A BD680 BD680 BD680A BD680A BD681 BD681 BD682 BD682 January 2008 Rev 5 Package Packaging SOT-32 Tube 1/12
www.st.com 12 Contents BD6xxx Contents
1 Absolute maximum ratings . 3 2 Electrical characteristics . 4
2.1 Typical characteristic (curves) 6 2.2 Test circuit . 8 3 Package mechanical data . 9 4 Revision history . 11 2/12 BD6xxx Absolute maximum ratings 1 Absolute maximum ratings Table 2. Absolute maximum ratings
Value Symbol Parameter NPN PNP BD677 BD679 BD677A BD679A BD678 BD680 BD678A BD680A 60 80 BD681 Unit BD682 VCBO Collector-base voltage (IE = 0) VCEO Collector-emitter voltage (IB = 0) VEBO Emitte-base voltage (IC = 0) 5 V Collector current 4 A Collector peak current 6 A Base current 0.1 A PTOT Total dissipation at Tcase = 25°C 40 W Tstg Storage temperature -65 to 150 °C 150 °C IC
ICM
IB TJ Note: Max. operating junction temperature 100 V For PNP types voltage and current values are negative 3/12 Electrical characteristics 2 BD6xxx Electrical characteristics
(Tcase = 25°C; unless otherwise specified)
Table 3.
Symbol Electrical characteristics
Parameter ICEO Collector cut-off current
(IB = 0) ICBO Collector cut-off current
(IE = 0) IEBO VCEO(sus)(1) VCE(sat)(1) VBE(1) Emitter cut-off current
(IC = 0) Collector-emitter
sustaining voltage (IB = 0) Test conditions Max. Unit VCE = half rated VCEO 0.5 mA VCE = rated VCBO 0.2
mA Tc = 100 °C 2 VEB = 5 V 2 for BD677, BD677A, …