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4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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MITSUBISHI HVIGBT MODULES CM2400HCB-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE CM2400HCB-34N ● IC . 2400 A
● VCES . 1700 V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
● Trench Gate IGBT : CSTBTTM
● Soft Reverse Recovery Diode APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 190 ±0.5
171 ±0.1
57 ±0.1 6 -M8 NUTS 57 ±0.1 20 -0.2 +0.1 57 ±0.1 C C C E E E C
C CM E
C E E 124 ±0.1
140 ±0.5 C 40 ±0.2 C G
E E G CIRCUIT DIAGRAM
20.25 ±0.2
8 -φ7 ±0.1 MOUNTING HOLES 41.25 ±0.3 screwing depth
min. 16.5 61.5 ±0.3 15 ±0.2
40 ±0.3 13 ±0.2 LABEL 29.5 ±0.5 5.2 ±0.2 28 +10 61.5 ±0.3 5 ±0.15 screwing depth
min. 7.7 79.4 ±0.3 38 +10 3 -M4 NUTS HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009
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