Datasheet Central Semiconductor CPD73-CMFBR-6F-WN — 数据表

PROCESS CPD73 Bridge Rectifier
Monolithic Quad Diode Bridge Chip PROCESS DETAILS
Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 (+DC) 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC) 3.0 x 7.0 MILS Top Side Metalization Al -12,000Å Back Side Metalization Au -5,000Å GEOMETRY
GROSS DIE PER 3 INCH WAFER
10,000
PRINCIPAL DEVICE TYPES
CMFBR-6F R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m PROCESS CPD73 Typical Electrical Characteristics R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m BARE DIE PACKING OPTIONS BARE DIE IN TRAY (WAFFLE) PACK
CT: Singulated die in tray (waffle) pack.
(example: CP211-PART NUMBER-CT) CM: S ingulated die in tray (waffle) pack 100% visually inspected as
per MIL-STD-750, (method 2072 transistors, method 2073 diodes).
(example: CP211-PART NUMBER-CM) UNSAWN WAFER
WN: Full wafer, unsawn, 100% tested with reject die inked.
(example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING
WR: F ull wafer, sawn and mounted on plastic ring,
100% tested with reject die inked.
(example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS)
is possible as a special order. Please contact your
Central Sales Representative at 631-435-1110.
Visit the Central website for a complete listing of specifications:
www.centralsemi.com/bdspecs
R2 (3-April 2017) …

CMKBR-6F
SURFACE MOUNT
SILICON BRIDGE RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKBR-6F is
a monolithic silicon full wave bridge rectifier, epoxy
molded in a SOT-363 surface mount package.
This device has been designed for use in computers
and peripheral equipment requiring high speed
switching, small size, and closely matched VF.
MARKING CODE: CBR3 SOT-363 CASE
FEATURES:
• Monolithic construction
• All diodes share closely matched
electrical characteristics
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage • Fast switching
• Very small size SYMBOL UNITS VRRM 60 V Continuous Forward Current IF 140 mA Power Dissipation PD 350 mW TJ, Tstg -65 to +150 °C ΘJA 357 °C/W Operating and Storage Junction Temperature
Thermal Resistance ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
IR VR=50V BVR IR=100µA VF IF=20mA CT VR=0, f=1.0MHz trr IF=IR=10mA, Irr=1.0mA 10 …

CMFBR-6F
SURFACE MOUNT SILICON
BRIDGE RECTIFIER SOT-143 CASE
MARKING CODE: CBR2 MAXIMUM RATINGS: (TA=25 °C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
IR
BVR
VF
CJ
trr w w w. c e n t r a l s e m i . c o m DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMFBR-6F is
a monolithic silicon full wave bridge rectifier, epoxy
molded in a SOT-143 surface mount package. This
device has been designed for use in computers and
peripheral equipment requiring high speed switching,
small size, and closely matched VF.
FEATURES: …