Datasheet Analog Devices HMC591LP5E — 数据表

HMC591LP5 / 591LP5E
v02.0107 GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 -9.5 GHz 11 Typical Applications Features The HMC591LP5 / HMC591LP5E is ideal for use as a
power amplifier for: Saturated Output Power: +33 dBm @ 20% PAE • Point-to-Point Radios Gain: 18 dB • Point-to-Multi-Point Radios DC Supply: +7.V @ 1340 mA • Test Equipment & Sensors 50 Ohm Matched Input/Output • Military End-Use QFN Leadless SMT Packages, 25 mm2 Output IP3: +41 dBm LINEAR & POWER AMPLIFIERS -SMT • Space Functional Diagram General Description
The HMC591LP5 & HMC591LP5E are high dynamic
range GaAs PHEMT MMIC 2 Watt Power Amplifiers
which operate from 6 to 9.5 GHz. The amplifier
provides 18 dB of gain, +33 dBm of saturated power,
and 19% PAE from a +7V supply. This 50 Ohm matched amplifier does not require any external
components and the RF I/Os are DC blocked for
robust operation. For applications which require
optimum OIP3, Idd should be set for 940 mA, to
yield +41 dBm OIP3. For applications which require
optimum output P1dB, Idd should be set for 1340 mA,
to yield +33 dBm Output P1dB. Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 1340 mA[1]
Parameter Min. Frequency Range Typ. Max. Min. 6-8 Gain 16 Units
GHz 18 dB 0.05 dB/ °C Input Return Loss 14 12 dB Output Return Loss 12 10 dB 33 dBm 33 dBm 41 41 dBm 1340 1340 mA Output Power for 1 dB
Compression (P1dB) 30 Saturated Output Power (Psat)
Output Third Order Intercept (IP3) 32
32.5 [2] Supply Current (Idd) 15 Max. 0.05 Gain Variation Over Temperature 19 Typ.
6 -9.5 30 [1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical.
[2] Measurement taken at 7V @ 940mA, Pin/Tone = -15 dBm 11 -302 For price,
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