Datasheet Analog Devices HMC-APH473-DIE — 数据表

HMC-APH473
v03.0209 LINEAR & POWER AMPLIFIERS -CHIP 3 GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 37 -40 GHz Typical Applications Features This HMC-APH473 is ideal for: Output IP3: +37 dBm • Point-to-Point Radios P1dB: +28 dBm • Point-to-Multi-Point Radios Gain: 15 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output
Die Size: 3.59 x 1.26 x 0.1 mm General Description Functional Diagram The HMC-APH473 is a two stage GaAs HEMT
MMIC 0.6 Watt Power Amplifier which operates
between 37 and 40 GHz.
The HMC-APH473
provides 15 dB of gain, and an output power of
+28 dBm at 1 dB compression from a +5V supply
voltage. All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully passivated
for reliable operation. The HMC-APH473 GaAs
HEMT MMIC 1 Watt Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes. Electrical Specifi cations [1] , TA = +25° C, Vdd1 = Vdd2 = 5V, Idd1 + Idd2 = 1080 mA [2]
Parameter Min. Frequency Range
Gain 11 Typ. Max. Units 37 -40 GHz 15 dB Input Return Loss 10 dB Output Return Loss 14 dB Output power for 1dB Compression (P1dB) 28 dBm Output Third Order Intercept (IP3) 37 dBm 1080 mA Supply Current (Idd1+Idd2)
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Iddtotal = 1080 mA 3 -184 For price, …