Datasheet Analog Devices HMC1086-DIE — 数据表

HMC1086
v06.0318 AMPLIFIERS -LINEAR & POWER -CHIP 25 WATT GaN MMIC POWER AMPLIFIER,
2 -6 GHz
Typical Applications Features The HMC1086 is ideal for: High Psat: +44.5 dBm • Test Instrumentation Power Gain at Psat: 14 dB • General Communications High Output IP3: +48 dBm • Radar Small Signal Gain: 22 dB
Supply Voltage: +28 V @ 1.1 A
50 Ohm Matched Input/Output
Die Size: 3.4 x 4 x 0.1 mm2 Functional Diagram General Description
The HMC1086 is a 25W Gallium Nitride (GaN) Power
Amplifier MMIC which operates between 2 and 6 GHz.
The amplifier typically provides 22 dB of small signal
gain, +44.5 dBm of saturated output power, and
+48 dBm output IP3 at +33 dBm output power per
tone. The HMC1086 draws 1100 mA quiescent current
from a +28V DC supply. The RF I/Os are DC blocked
and matched to 50 Ohms for ease of integration into
Multi-Chip-Modules (MCM). All electrical performance
data was acquired with die eutectically attached to
1.02 mm (40 mil) thick CuMo carrier with multiple
1.0 mil diameter ball bonds connecting the die to
50 Ohm transmission lines on alumina. Electrical Specifications, TA = +25 °C, Vdd = VD1 = VD2 = +28V, Idd = 1100 mA [1]
Parameter Min. Frequency Range
Small Signal Gain Typ. Max. Min. 2 -3.5
21 22 Typ. Max. Min. 3.5 -5 …