HMC7149
v AMPLIFIERS -LINEAR & POWER -CHIP 10 WATT GaN MMIC POWER AMPLIFIER,
6 -18 GHz Typical Applications Features The HMC7149 is ideal for: High Psat: +40 dBm • Test Instrumentation Power Gain at Psat: +10 dB • General Communications High Output IP3: +39.5 dBm • Radar Small Signal Gain: 20 dB
Supply Voltage: +28 V @ 680 mA
50 Ohm Matched Input/Output
Die Size: 3.4 x 4.5 x 0.1 mm Functional Diagram General Description
The HMC7149 is an 10W Gallium Nitride (GaN) MMIC
Power Amplifier which operates between 6 and 18
GHz. The amplifier typically provides 20dB of small
signal gain, +40 dBm of saturated output power, and
+39.5 dBm output IP3 at +28 dBm output power per
tone. The HMC7149 draws 680 mA current from
a +28V DC supply. The RF I/Os are matched to 50
Ohms for ease of integration into Multi-Chip-Modules
(MCMs). All electrical performance data was aquired
with the die eutectically attached to 1.02 mm (40 mil)
thick CuMo carrier with multiple 1.0 mil diameter ball
bonds connecting the die to 50 Ohm transmission
lines on alumina. Electrical Specifications, Tc = +25°C, Vdd= Vdd1 =Vdd2 = +28 V, Idd = 680 mA [1]
Parameter Min. Frequency Range Typ. Max. Min. 6 -10 Small Signal Gain 19 21 Typ. Max. Min. 10 -14
18 20 Typ. Max. Min. 14 -16
17 19 18 Typ. Max. Units 16 -18 GHz 20 dB Gain Flatness ±0.5 ±0.6 ±0.5 ±0.7 dB Gain Variation Over Temperature 0.023 0.02 0.02 0.018 dB/ °C Input Return Loss 17 17 16 11 dB Output Return Loss 17 17 18 12 dB Output Power for 4 dB Compression
(P4dB) 35 35 35 36 dBm Power Gain for 4 dB compression …