FEATURES FUNCTIONAL BLOCK DIAGRAM 2 5 VGG2 RFIN
VGG1 8 7 6 13738-001 Test instrumentation
Microwave radios and VSATs
Military and space
Telecommunications infrastructure
Fiber optics HMC930A RFOUT/VDD 1 APPLICATIONS 4 ACG2 3 ACG1 High output power for 1 dB compression (P1dB): 22 dBm
High saturated output power (PSAT): 24 dBm
High gain: 13 dB
High output third-order intercept (IP3): 33.5 dBm
Supply voltage: 10 V at 175 mA
50 Ω matched input/output
Die size: 2.82 mm × 1.50 mm × 0.1 mm ACG4
ACG3 Data Sheet GaAs, pHEMT, MMIC,
0.25 W Power Amplifier, DC to 40 GHz
HMC930A Figure 1. GENERAL DESCRIPTION
The HMC930A is a gallium arsenide (GaAs), pseudomorphic,
high electron mobility transfer (pHEMT), monolithic microwave
integrated circuit (MMIC), distributed power amplifier that
operates from dc to 40 GHz. The HMC930A provides 13 dB of
gain, 33.5 dBm output IP3, and 22 dBm of output power at
1 dB gain compression, requiring 175 mA from a 10 V supply.
The HMC930A exhibits a slightly positive gain slope from Rev. A 8 GHz to 32 GHz, making it ideal for electronic warfare (EW),
electronic countermeasures (ECM), radar, and test equipment …