Datasheet Analog Devices HMC998A-SX — 数据表

HMC998A
v03.0918 Typical Applications Features The HMC998A is ideal for: High P1dB Output Power: +32.5 dBm • Test Instrumentation High Psat Output Power: +33.5 dBm • Microwave Radio & VSAT High Gain: 14.5 dB • Military & Space High Output IP3: 43 dBm • Telecom Infrastructure Supply Voltage: +15 V @ 500 mA • Fiber Optics 50 Ohm Matched Input/Output
Die Size: 2.98 x 1.78 x 0.1 mm General Description Functional Diagram ACG2 5 RFOUT
&
VDD RFIN
VGG1 8 ACG3 1 VGG2 ACG4 2 The HMC998A is a GaAs MMIC pHEMT Distributed
Power Amplifier die which operates between DC and
22 GHz. The amplifier provides 14.5 dB of gain, 43 dBm
output IP3 and +32.5 dBm of output power at 1 dB gain
compression while requiring 500 mA quiescent current
from a +15 V supply. The HMC998A exhibits a slightly
positive gain slope, making it ideal for EW, ECM, Radar
and test equipment applications. The HMC998A amplifier I/Os are internally matched to 50 Ohms facilitating
integration into Mutli-Chip-Modules (MCMs). All data
is taken with the chip connected via two 0.025 mm
(1 mil) wire bonds of minimal length 0.31 mm (12 mils). 4 3 ACG1 AMPLIFIERS -LINEAR & POWER -CHIP GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, DC -22 GHz 7 6 Electrical Specifications, TA = +25° C, Vdd = +15 V, Idd = 500 mA*
Parameter Min. Frequency Range
Gain Typ. Max. Min. DC -2
13 Typ. Max. Min. 2 -18 15 12.5 14.5 12 Typ. Max. Units 18 -22 GHz 14 dB Gain Flatness ±0.15 ±0.15 ±0.15 dB Gain Variation Over Temperature .006 .004 .009 dB/ °C
dB Input Return Loss 14 18 15 Output Return Loss 13 16 17 dB 31.5 dBm 33.5 33 dBm Output Power for 1 dB Compression (P1dB) 29.5 30.5 32.5 29.5 Saturated Output Power (Psat) 34 Output Third Order Intercept (IP3) 41 43 41.5 dBm Noise Figure 8 2.5 3 dB 500 500 500 mA Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.6V Typ.)
Supply Voltage 11 15 15 11 15 15 11 15 15 V * Adjust Vgg1 between -2 to 0 V to achieve Idd = 500 mA typical. …