Datasheet Analog Devices HMC463LH250 — 数据表

HMC463LH250
v06.1217 AMPLIFIERS -LOW NOISE -SMT GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 -20 GHz
Typical Applications Features The HMC463LH250 is ideal for: 50 Ohm Matched Input/Output • Telecom Infrastructure Hermetic SMT Package • Microwave Radio & VSAT Gain: 14 dB • Military EW, ECM & C I Noise Figure: 2.5 dB @ Mid-Band • Test Instrumentation P1dB Output Power: +18 dBm @ Mid-Band • Fiber Optics Supply Voltage: +5V @ 60mA 3 Screening to MIL-PRF-38535 (Class B or S) Available Functional Diagram General Description
The HMC463LH250 is a GaAs MMIC pHEMT Low
Noise AGC Distributed Amplifier packaged in a
hermetic surface mount package which operates
between 2 and 20 GHz. The amplifier provides 13
dB of gain, 3 dB noise figure and 18 dBm of output
power at 1 dB gain compression while requiring only
60 mA from a +5V supply. An optional gate bias
(Vgg2) is provided to allow Adjustable Gain Control
(AGC) of 8 dB typical. Gain flatness is excellent at
±0.5 dB from 2 -14 GHz making the HMC463LH250
ideal for EW, ECM RADAR, test equipment and
High-Reliability applications. The HMC463LH250
LNA I/Os are internally matched to 50 Ohms and are
internally DC blocked. Electrical Specifications, TA = +25° C, Vdd= 5V, Vgg2= Open, Idd= 60 mA*
Parameter Min. Frequency Range
Gain Typ. Max. Min. 2.0 -6.0
11.5 ±0.25 Gain Variation Over Temperature 0.010 Max. Min. 6.0 -16.0 14.5 Gain Flatness Typ. 9 12 8 ±0.5
0.010 16.0 -20.0 GHz 11 dB ±0.9 dB 0.010 15 15 9 dB Output Return Loss 11 15 7 dB 13 dBm 19 dBm Output Third Order Intercept (IP3) 29 27 24 dBm Supply Current
(Idd) (Vdd= 5V, Vgg1= -0.9V Typ.) 60 60 10 dB 20.5 80 18 5.5 21.5 Saturated Output Power (Psat) 13 4 dB/ °C Input Return Loss 19 4.5 Units 3.5 16 2.5 Max. Noise Figure Output Power for 1 dB Compression (P1dB) 5.5 Typ. 80 60 80 mA * Adjust Vgg1 between -2 to -0V to achieve Idd= 60 mA typical. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no …