Datasheet Analog Devices HMC-ALH445-DIE — 数据表

HMC-ALH445
v03.0410 AMPLIFIERS -LOW NOISE -CHIP 1 GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 18 -40 GHz Typical Applications Features This HMC-ALH445 is ideal for: Noise Figure: 3.9 dB @ 28 GHz • Wideband Communication Systems Gain: 9 dB • Point-to-Point Radios P1dB Output Power: +12 dBm @ 28 GHz • Point-to-Multi-Point Radios Supply Voltage: +5V @ 45 mA • Military & Space Die Size: 1.6 x 1.6 x 0.1 mm • Test Instrumentation Functional Diagram General Description
The HMC-ALH445 is a GaAs MMIC HEMT self-biased,
wideband Low Noise Amplifier die which operates
between 18 and 40 GHz. The amplifier provides
9 dB of gain, 3.9 dB noise figure at 28 GHz and
+12 dBm of output power at 1 dB gain compression
while requiring only 45 mA from a single +5V supply.
The HMC-ALH445 amplifier is ideal for integration into
Multi-Chip-Modules (MCMs) due to its small size. Electrical Specifi cations*, TA = +25° C, Vdd= +5V
Parameter Min. Frequency Range
Gain Typ. Max. Min. 18 -28
8 Typ. Max. 28 -40 9 8
5 GHz 10
3.9 Units dB Noise Figure 4 4.5 Input Return Loss 10 10 dB Output Return Loss 15 15 dB Output Power for 1 dB Compression 12 13 dBm Supply Current (Idd) (Vdd = 5V) 45 45 mA dB *Unless otherwise indicated, all measurements are from probed die 1 -192 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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