Datasheet Analog Devices HMC-ALH476 — 数据表

HMC-ALH476
v02.0209 LOW NOISE AMPLIFIERS -CHIP 1 GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 -27 GHz Typical Applications Features This HMC-ALH476 is ideal for: Noise Figure: < 2 dB @ 20 GHz • Point-to-Point Radios Gain: 20 dB • Point-to-Multi-Point Radios P1dB Output Power: +14 dBm • Military & Space Supply Voltage: +4V @ 90 mA • Test Instrumentation Die Size: 2.25 x 1.58 x 0.1 mm Functional Diagram General Description
The HMC-ALH476 is a GaAs MMIC HEMT Low Noise
Wideband Amplifier die which operates between 14
and 27 GHz. The amplifier provides 20 dB of gain, 2
dB noise figure and +14 dBm of output power at 1 dB
gain compression while requiring only 90 mA from a
+4V supply voltage. The HMC-ALH476 amplifier is
ideal for integration into Multi-Chip-Modules (MCMs)
due to its small size. Electrical Specifi cations, TA = +25° C, Vdd= +4V
Parameter Min. Frequency Range
Gain Typ. Max. Min. 14 -18
18 Typ. Max. 18 -27 20 18 Units
GHz 20 dB 0.02 dB / °C Gain Variation over Temperature 0.02 Noise Figure 2.5 Input Return Loss 16 17 Output Return Loss 18 20 dB Output Power for 1 dB Compression 14 14 dBm Supply Current (Idd) (Vdd = 4V, Vgg = -0.3V Typ.) 90 90 mA 3 2 2.6 dB
dB *Unless otherwise indicated, all measurements are from probed die 1 -198 For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
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Microwave
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