Datasheet Analog Devices HMC-ALH509-DIE — 数据表

HMC-ALH509
v05.0713 Amplifiers -CHIP GaAs HEMT LOW NOISE AMPLIFIER
71 -86 GHz
Typical Applications Features This HMC-ALH509 is ideal for: Noise Figure: 5 dB • Short Haul / High Capacity Links P1dB: +7 dBm • Automotive Radar Gain: 14 dB • E-Band Communication Systems Supply Voltage: +2V • Test & Measurement 50 Ohm Matched Input/Output
Die Size: 3.20 x 1.60 x 0.1 mm General Description Functional Diagram The HMC-ALH509 is a three stage GaAs HEMT
MMIC Low Noise Amplifier (LNA) which operates
between 71 and 86 GHz. The HMC-ALH509 features
14 dB of small signal gain, 5 dB of noise figure and
an output power of +7 dBm at 1dB compression
from a +2V supply voltage. All bond pads and the
die backside are Ti/Au metallized. This versatile
LNA is compatible with conventional die attach
methods, as well as thermocompression and
thermosonic wire bonding, making it ideal for MCM
and hybrid microcircuit applications. All data shown
herein is measured with the chip in a 50 Ohm
environment and contacted with RF probes. Electrical Specifications, TA = +25° C, Vdd = 2V*
Parameter Min. Frequency Range
Gain Typ.
71 -86 12 Max. Units
GHz 14 dB Noise Figure 5 dB Input Return Loss 14 dB Output Return Loss 10 dB Output Power for 1 dB Compression (P1dB) 7 dBm Supply Current (Idd)(Vdd=2V, Vgg= -0.2V Typ.) 50 mA *Unless otherwise indicated, all measurements are from probed die 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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