Datasheet Analog Devices HMC8325-SX — 数据表

71 GHz to 86 GHz,
E-Band Low Noise Amplifier
HMC8325 Data Sheet
FEATURES GENERAL DESCRIPTION Gain: 21 dB typical
Noise figure: 3.6 dB typical
Output power for 1 dB compression: 13 dBm typical
Input third-order intercept at maximum gain: 1 dBm typical
Output third-order intercept at maximum gain: 22 dBm typical
Saturated output power: 17 dBm typical
Input return loss: 15 dB typical
Output return loss: 17 dB typical
Die size: 2.844 mm × 0.999 mm × 0.05 mm The HMC8325 is an integrated E-band gallium arsenide (GaAs),
monolithic microwave integrated circuit (MMIC), low noise
amplifier (LNA) chip that operates from 71 GHz to 86 GHz.
The HMC8325 provides 21 dB of gain, 13 dBm of output P1dB,
22 dBm of OIP3, and 17 dBm of PSAT while requiring only 50 mA
from a 3 V power supply. The HMC8325 exhibits excellent linearity
and is optimized for E-band communications and high capacity,
wireless backhaul radio systems. All data is taken with the chip
in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick ×
7 mil long ribbon on each port. APPLICATIONS
E-band communication systems
High capacity wireless backhauls …