Datasheet Analog Devices ADL9006ACGZN-R7 — 数据表

2 GHz to 28 GHz, GaAs, pHEMT, MMIC,
Low Noise Amplifier
ADL9006CHIPS Data Sheet
FEATURES GENERAL DESCRIPTION P1dB: 19 dBm typical at 2 GHz to 14 GHz
at 2 GHz to 14 GHzGain: 15.5 dB typical at 14 GHz to 22 GHz
Noise figure: 2.2 dB at 2 GHz to 14 GHz
Output IP3: 24 dBm typical at 2 GHz to 14 GHz
Power supply voltage: 5 V with a 55 mA total supply current
50 Ω matched input and output The ADL9006CHIPS is a gallium arsenide (GaAs),
pseudomorphic high electron mobility transistor (pHEMT),
monolithic microwave integrated circuit (MMIC), low noise
amplifier that operates from 2 GHz to 28 GHz. The amplifier
provides 15.5 dB of gain, 2.2 dB of noise figure, 24 dBm of
output third-order intercept (IP3), 20 dBm of output saturated
power (PSAT), and 19 dB of power output for 1 dB compression
(P1dB) while requiring a 55 mA power supply current (IDD) from
a 5 V total supply voltage. The ADL9006CHIPS is self biased with
only a single positive supply needed to achieve an IDD of 55 mA. APPLICATIONS
Test instrumentation
Microwave radios and very small aperture terminals (VSATs)
Military and space The ADL9006CHIPS amplifier input and output are internally
matched to 50 Ω facilitating integration into multichip modules
(MCMs). FUNCTIONAL BLOCK DIAGRAM …

2 GHz to 28 GHz, GaAs,
pHEMT, MMIC Low Noise Amplifier
ADL9006 Data Sheet 1
2
3
4
5
6
7
8 ADL9006 GND 9
NIC 10
NIC 11
NIC 12
NIC 13
NIC 14
NIC 15
GND 16 Test instrumentation
Military and space
Local oscillator driver amp GND
VGG2
GND
RFIN
GND …