Datasheet Analog Devices HMC-APH403-DIE — 数据表

HMC-APH403
v03.0209 3 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 37 -45 GHz Typical Applications Features This HMC-APH403 is ideal for: Output IP3: +32 dBm • Point-to-Point Radios P1dB: +23 dBm • Point-to-Multi-Point Radios Gain: 21 dB • Military & Space Supply Voltage: +5V LINEAR & POWER AMPLIFIERS -CHIP 50 Ohm Matched Input/Output
Die Size: 2.76 x 1.03 x 0.1 mm General Description Functional Diagram The HMC-APH403 is a three stage GaAs HEMT MMIC
Medium Power Amplifier which operates between
37 and 45 GHz. The HMC-APH403 provides 21 dB
of gain, and an output power of +23 dBm at 1 dB
compression from a +5V supply voltage. All bond
pads and the die backside are Ti/Au metallized and
the amplifier device is fully passivated for reliable
operation. The HMC-APH403 GaAs HEMT MMIC
Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it
ideal for MCM and hybrid microcircuit applications.
All data Shown herein is measured with the chip in a
50 Ohm environment and contacted with RF probes. Electrical Specifi cations [1], TA = +25° C
Vdd1=Vdd2=Vdd3= 5V, Idd1+ Idd2 + Idd3= 475 mA [2]]
Parameter Min Frequency Range
Gain Typ
37 -45 19 Max Units
GHz 21 dB Input Return Loss 6 dB Output Return Loss 7 dB 23 dBm Output Third Order Intercept (IP3) Output Power for 1 dB Compression (P1dB) 22 32 dBm Supply Current (Idd1 + Idd2 + Idd3) 475 mA [1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2=Vgg3 between -1V to +0.3V (typ -0.5V) to achieve Idd total = 475 mA 3 -166 For price,
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