Datasheet Analog Devices HMC-APH596-DIE — 数据表

HMC-APH596
v02.0208 LINEAR & POWER AMPLIFIERS -CHIP 3 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 16 -33 GHz Typical Applications Features This HMC-APH596 is ideal for: Output IP3: +33 dBm • Point-to-Point Radios P1dB: +24 dBm • Point-to-Multi-Point Radios Gain: 17 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output
Die Size: 2.55 x 1.87 x 0.1 mm General Description Functional Diagram The HMC-APH596 is a two stage GaAs HEMT
MMIC Medium Power Amplifier which operates
between 16 and 33 GHz. The HMC-APH596 provides
17 dB of gain, and an output power of +24 dBm at
1 dB compression from a +5V supply voltage. All
bond pads and the die backside are Ti/Au metallized
and the amplifier device is fully passivated for reliable
operation. The HMC-APH596 GaAs HEMT MMIC
Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal
for MCM and hybrid microcircuit applications. All
data Shown herein is measured with the chip in a 50
Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd1=Vdd2 = 5V, Idd1+Idd2 = 400 mA [2]
Parameter Min. Frequency Range
Gain 16 Typ. Max. Units 16 -33 GHz 17 dB Input Return Loss 17 dB Output Return Loss 18 dB Output power for 1dB Compression (P1dB) 24 dBm Output Third Order Intercept (IP3) 33 dBm Supply Current (Idd1+Idd2) 400 mA [1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Iddtotal = 400 mA 3 -208 For price,
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