Datasheet Analog Devices HMC-AUH318-DIE — 数据表

HMC-AUH318
v07.0713 3 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 -76 GHz Typical Applications Features This HMC-AUH318 is ideal for: Gain: 24 dB • Short Haul / High Capacity Links P1dB: +17.5 dBm • Test & Measurement Equipment Supply Voltage: +4V • E-Band Communication Systems 50 Ohm Matched Input/Output AMPLIFIERS -LINEAR & POWER -CHIP Die Size: 2.65 x 1.60 x 0.05 mm General Description Functional Diagram The HMC-AUH318 is a high dynamic range, three
stage GaAs HEMT MMIC Medium Power Amplifier
which operates between 71 and 76 GHz. The HMCAUH318 provides 24 dB of gain, and an output
power of +17.5 dBm at 1 dB compression from a +4V
supply voltage. All bond pads and the die backside
are Ti/Au metallized. The HMC-AUH318 GaAs
HEMT MMIC Medium Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes. Electrical Specifications[1], TA = +25° C, Vdd1 = Vdd2 = 4V, Idd1 = Idd2 = 80 mA [2]
Parameter Min. Frequency Range Typ. Max. Units 71 -76 GHz 24 dB Input Return Loss 7 dB Output Return Loss 4 dB Gain 21 17.5 dBm Saturated Output Power (Psat) Output power for 1 dB Compression (P1dB) 20 dBm Supply Current (Idd1+Idd2) 160 mA [1] Unless otherwise indicated, all measurements are from probed die.
[2] Adjust Vgg1, Vgg2 independently between -0.8V to +0.3V (typically -0.1V) to achieve drain currents of Idd1 = 80 mA and Idd2 = 80 mA. Products and product information are subject to change without notice. 3-1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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