Datasheet Analog Devices HMC633-SX — 数据表

HMC633
v02.0517 AMPLIFIERS -DRIVER & GAIN BLOCK -CHIP 2 GaAs PHEMT MMIC DRIVER
AMPLIFIER, 5 -17 GHz Typical Applications Features The HMC633 is ideal for: Gain: 29 dB • Point-to-Point Radios P1dB: +23 dBm • Point-to-Multi-Point Radios & VSAT Output IP3: +30 dBm • LO Driver for Mixers Saturated Power: +24 dBm @ 27% PAE • Military & Space Supply Voltage: +5V @ 180 mA
50 Ohm Matched Input/Output
Die Size: 2.07 x 0.93 x 0.1 mm Functional Diagram General Description
The HMC633 is a GaAs MMIC PHEMT Driver
Amplifier die which operates between 5 and 17 GHz.
The amplifier provides up to 31 dB of gain, +30 dBm
Output IP3, and +23 dBm of output power at 1 dB
gain compression, while requiring 180 mA from a +5V
supply. The HMC633 is an ideal driver amplifier for
microwave radio applications from 5 to 17 GHz, and
may also be biased at +5V, 130 mA to provide 2 dB
lower gain with improved PAE. The HMC633 amplifier
I/O’s are DC blocked and internally matched to 50
Ohms facilitating easy integration into Multi-ChipModules (MCMs). All data is taken with die connected
at input and output RF ports via one 1 mil wedge bond
with minimal length of 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd1, Vdd2, Vdd3, Vdd4 = 5V, Idd = 180 mA[1]
Parameter Min. Frequency Range
Gain 27 Gain Variation Over Temperature Min. 26
0.044 23 Max. 16 21 Units
GHz 29
0.040 15 …