Datasheet Analog Devices HMC8142-SX — 数据表

81 GHz to 86 GHz, E-Band Power Amplifier
With Power Detector
HMC8142 Data Sheet
FEATURES GENERAL DESCRIPTION Gain: 21 dB typical
Output power for 1 dB compression (P1dB): 25 dBm typical
Saturated output power (PSAT): 26 dBm typical
Output third-order intercept (OIP3): 29 dBm typical
Input return loss: 12 dB typical
Output return loss: 8 dB typical
DC supply: 4 V at 450 mA
No external matching required
Die size: 3.039 mm × 1.999 mm × 0.05 mm The HMC8142 is an integrated E-band gallium arsenide (GaAs),
pseudomorphic high electron mobility transistor (pHEMT),
monolithic microwave integrated circuit (MMIC), medium power
amplifier with a temperature compensated on-chip power detector
that operates from 81 GHz to 86 GHz. The HMC8142 provides
21 dB of gain, 25 dBm of output power at 1 dB compression,
29 dBm of output third-order intercept, and 26 dBm of saturated
output power at 20% power added efficiency (PAE) from a 4 V
power supply. The HMC8142 exhibits excellent linearity and is optimized for E-band communications and high capacity wireless
backhaul radio systems. The amplifier configuration and high gain
make it an excellent candidate for last stage signal amplification
before the antenna. All data is taken with the chip in a 50 Ω test …