Datasheet Analog Devices HMC311LP3TR — 数据表

HMC311LP3 / 311LP3E
v07.0420 DRIVER & GAIN BLOCK AMPLIFIERS -SMT InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC -6 GHz
Typical Applications Features The HMC311LP3(E) is ideal for: P1dB Output Power: +15.5 dBm • Cellular / PCS / 3G Output IP3: +32 dBm • Fixed Wireless & WLAN Gain: 14.5 dB • CATV & Cable Modem 50 Ohm I/O’s • Microwave Radio 16 Lead 3x3mm SMT Package: 9mm2 Functional Diagram General Description
The HMC311LP3(E) is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC
SMT DC to 6 GHz amplifiers. This 3x3mm
QFN packaged amplifier can be used as either a
cascadable 50 Ohm gain stage or to drive the LO of
HMC mixers with up to +17 dBm output power. The
HMC311LP3(E) offers 14.5 dB of gain and an output
IP3 of +32 dBm while requiring only 56 mA from a
+5V supply. The Darlington feedback pair used results
in reduced sensitivity to normal process variations
and yields excellent gain stability over temperature
while requiring a minimal number of external bias
components. Electrical Specifications, Vs= 5V, Rbias= 22 Ohm, TA = +25° C
Parameter Min. Typ. 13.0
12.5
12.0 14.5
14.3
14.0 Max. Units Gain DC -1.0 GHz
1.0 -4.0 GHz …

HMC311LP3 / 311LP3E
v06.0617 DRIVER & GAIN BLOCK AMPLIFIERS -SMT InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC -6 GHz
Typical Applications Features The HMC311LP3(E) is ideal for: P1dB Output Power: +15.5 dBm • Cellular / PCS / 3G Output IP3: +32 dBm • Fixed Wireless & WLAN Gain: 14.5 dB • CATV & Cable Modem 50 Ohm I/O's • Microwave Radio 16 Lead 3x3mm SMT Package: 9mm2 Functional Diagram General Description
The HMC311LP3(E) is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC
SMT DC to 6 GHz amplifiers. This 3x3mm
QFN packaged amplifier can be used as either a
cascadable 50 Ohm gain stage or to drive the LO of
HMC mixers with up to +17 dBm output power. The
HMC311LP3(E) offers 14.5 dB of gain and an output
IP3 of +32 dBm while requiring only 56 mA from a
+5V supply. The Darlington feedback pair used results
in reduced sensitivity to normal process variations
and yields excellent gain stability over temperature
while requiring a minimal number of external bias
components. Electrical Specifications, Vs= 5V, Rbias= 22 Ohm, TA = +25° C
Parameter Min. Typ. 13.0
12.5
12.0 14.5
14.3
14.0 Max. Units Gain DC -1.0 GHz
1.0 -4.0 GHz …