Datasheet Texas Instruments INA828IDR — 数据表
制造商 | Texas Instruments |
系列 | INA828 |
零件号 | INA828IDR |
50-ОјV失调,7nV /?Hz噪声,低功耗,精密仪表放大器8-SOIC -40至125
数据表
INA828 50-µV Offset, 7-nV/в€љHz Noise, Low-Power, Precision Instrumentation Amplifier datasheet
PDF, 2.0 Mb, 档案已发布: Aug 24, 2016
从文件中提取
价格
状态
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes |
打包
Pin | 8 |
Package Type | D |
Industry STD Term | SOIC |
JEDEC Code | R-PDSO-G |
Package QTY | 2500 |
Carrier | LARGE T&R |
Device Marking | INA828 |
Width (mm) | 3.91 |
Length (mm) | 4.9 |
Thickness (mm) | 1.58 |
Pitch (mm) | 1.27 |
Max Height (mm) | 1.75 |
Mechanical Data | 下载 |
参数化
Bandwidth at Min Gain(Typ) | 2 MHz |
CMRR(Min) | 140 dB |
Gain Error (+/-)(Max) | 0.15 % |
Gain Non-Linearity (+/-)(Max) | 0.001 % |
Gain(Max) | 1000 V/V |
Gain(Min) | 1 V/V |
Input Bias Current (+/-)(Max) | 0.6 nA |
Input Offset (+/-)(Max) | 50 uV |
Input Offset Drift (+/-)(Max) | 0.5 uV/C |
Iq(Typ) | 0.6 mA |
Noise at 0.1 Hz - 10 Hz(Typ) | 0.14 uVpp |
Noise at 1kHz(Typ)(nV/rt | 7 Hz |
Number of Channels | 1 |
Operating Temperature Range | -40 to 125 C |
Package Group | SOIC |
Package Size: mm2:W x L | 8SOIC: 29 mm2: 6 x 4.9(SOIC) PKG |
Rating | Catalog |
Vs(Max) | 36 V |
Vs(Min) | 4.5 V |
生态计划
RoHS | Compliant |
模型线
系列: INA828 (2)
- INA828ID INA828IDR
制造商分类
- Semiconductors > Amplifiers > Instrumentation Amplifiers