Datasheet Siemens Q62702-S636 — 数据表

SIPMOSпЈЁ Small-Signal Transistor BSS 101 в—Џ VDS
240 V
в—Џ ID
0.13 A
● RDS(on) 16 Ω
● VGS(th) 0.8 … 2.0 V
в—Џ N channel
в—Џ Enhancement mode
в—Џ Logic level 2
3
1 1 Type Ordering
Code Tape and Reel
Information Pin Configuration Marking BSS 101 Q62702-S484 bulk BSS 101 Q62702-S493 E6288: 1500 pcs/reel;
2 reels/carton; gate first BSS 101 Q62702-S636 E6325: 2000 pcs/carton;
Ammopack 1 2 3 S G D 2 3 Package BSS 101
marked
SS101 TO-92 Maximum Ratings
Parameter Symbol Values Unit Drain-source voltage VDS 240 V Drain-gate voltage, RGS = 20 kΩ VDGR 240 Gate-source voltage VGS ± 14 Gate-source peak voltage, aperiodic Vgs ± 20 Continuous drain current, TA = 33 ˚C ID 0.13 A Pulsed drain current, TA = 25 ˚C ID puls 0.52 Max. power dissipation, TA = 25 ˚C Ptot 0.63 W Operating and storage temperature range Tj, Tstg – 55 … + 150 ˚C Thermal resistance, chip-ambient
(without heat sink) RthJA ≤ 200 K/W DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Semiconductor Group 305 10.94 BSS 101 Electrical Characteristics
at Tj = 25 ЛљC, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. 240 – – 0.8 1.4 2.0 Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA V(BR)DSS Gate threshold voltage …