2N4401
General Purpose
Transistors
NPN Silicon
http://onsemi.com Features • Pb−Free Packages are Available*
COLLECTOR
3 MAXIMUM RATINGS
Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 60 Vdc Emitter − Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation
@ TA = 25°C
Derate above 25°C PD 625
5.0 mW
mW/°C Total Device Dissipation
@ TC = 25°C
Derate above 25°C PD 1.5
12 W
mW/°C TJ, Tstg −55 to
+150 °C Operating and Storage Junction
Temperature Range THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. 2
BASE
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