Datasheet Texas Instruments SN54HC132 — 数据表

制造商Texas Instruments
系列SN54HC132
Datasheet Texas Instruments SN54HC132

具有施密特触发器输入的四路正与非门

数据表

SNx4HC132 Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs datasheet
PDF, 2.0 Mb, 修订版: G, 档案已发布: Jun 30, 2016
从文件中提取

价格

状态

5962-89845022A5962-8984502CA5962-8984502DASN54HC132JSNJ54HC132FKSNJ54HC132JSNJ54HC132W
Lifecycle StatusActive (Recommended for new designs)Active (Recommended for new designs)Active (Recommended for new designs)Active (Recommended for new designs)Active (Recommended for new designs)Active (Recommended for new designs)Active (Recommended for new designs)
Manufacture's Sample AvailabilityNoNoNoNoNoNoNo

打包

5962-89845022A5962-8984502CA5962-8984502DASN54HC132JSNJ54HC132FKSNJ54HC132JSNJ54HC132W
N1234567
Pin20141414201414
Package TypeFKJWJFKJW
Industry STD TermLCCCCDIPCFPCDIPLCCCCDIPCFP
JEDEC CodeS-CQCC-NR-GDIP-TR-GDFP-FR-GDIP-TS-CQCC-NR-GDIP-TR-GDFP-F
Package QTY1111111
CarrierTUBETUBETUBETUBETUBETUBETUBE
Width (mm)8.896.675.976.678.896.675.97
Length (mm)8.8919.569.2119.568.8919.569.21
Thickness (mm)1.834.571.594.571.834.571.59
Pitch (mm)1.272.541.272.541.272.541.27
Max Height (mm)2.035.082.035.082.035.082.03
Mechanical Data下载下载下载下载下载下载下载
Device MarkingSN54HC132J89845022ASNJ54HC132JSNJ54HC132W

参数化

Parameters / Models5962-89845022A
5962-89845022A
5962-8984502CA
5962-8984502CA
5962-8984502DA
5962-8984502DA
SN54HC132J
SN54HC132J
SNJ54HC132FK
SNJ54HC132FK
SNJ54HC132J
SNJ54HC132J
SNJ54HC132W
SNJ54HC132W
Bits4444444
F @ Nom Voltage(Max), Mhz70707070707070
ICC @ Nom Voltage(Max), mA0.020.020.020.020.020.020.02
Input TypeCMOSCMOSCMOSCMOSCMOSCMOSCMOS
Operating Temperature Range, C-55 to 125-55 to 125-55 to 125-55 to 125-55 to 125-55 to 125-55 to 125
Output Drive (IOL/IOH)(Max), mA5.2/-5.25.2/-5.25.2/-5.25.2/-5.25.2/-5.25.2/-5.25.2/-5.2
Output TypeCMOSCMOSCMOSCMOSCMOSCMOSCMOS
Package GroupLCCCCDIPCFPCDIPLCCCCDIPCFP
Package Size: mm2:W x L, PKG20LCCC: 79 mm2: 8.89 x 8.89(LCCC)See datasheet (CDIP)See datasheet (CFP)See datasheet (CDIP)20LCCC: 79 mm2: 8.89 x 8.89(LCCC)See datasheet (CDIP)See datasheet (CFP)
RatingMilitaryMilitaryMilitaryMilitaryMilitaryMilitaryMilitary
Schmitt TriggerYesYesYesYesYesYesYes
Technology FamilyHCHCHCHCHCHCHC
VCC(Max), V6666666
VCC(Min), V2222222
tpd @ Nom Voltage(Max), ns31313131313131

生态计划

5962-89845022A5962-8984502CA5962-8984502DASN54HC132JSNJ54HC132FKSNJ54HC132JSNJ54HC132W
RoHSSee ti.comSee ti.comSee ti.comSee ti.comSee ti.comSee ti.comSee ti.com

应用须知

  • Input and Output Characteristics of Digital Integrated Circuits
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    PDF, 614 Kb, 修订版: C, 档案已发布: Dec 2, 2015
  • Semiconductor Packing Material Electrostatic Discharge (ESD) Protection
    PDF, 337 Kb, 档案已发布: Jul 8, 2004
    Forty-eight-pin TSSOP components that were packaged using Texas Instruments (TI) standard packing methodology were subjected to electrical discharges between 0.5 and 20 kV as generated by an IEC ESD simulator to determine the level of ISD protection provided by the packing materials. The testing included trays tape and reel and magazines. Additional units were subjected to the same discharge
  • Designing With Logic (Rev. C)
    PDF, 186 Kb, 修订版: C, 档案已发布: Jun 1, 1997
    Data sheets which usually give information on device behavior only under recommended operating conditions may only partially answer engineering questions that arise during the development of systems using logic devices. However information is frequently needed regarding the behavior of the device outside the conditions in the data sheet. Such questions might be:?How does a bus driver behave w
  • Introduction to Logic
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  • Implications of Slow or Floating CMOS Inputs (Rev. D)
    PDF, 260 Kb, 修订版: D, 档案已发布: Jun 23, 2016
  • CMOS Power Consumption and CPD Calculation (Rev. B)
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    Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. As a result CMOS devices are best known for low power consumption. However for minimizing the power requirements of a board or a system simply knowing that CMOS devices may use less power than equivale
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    Though low power consumption is a feature of CMOS devices sometimes this feature does not meet a designer?s system power supply constraints. Therefore a partial system power down or multiple Vcc supplies are used to meet the needs of the system. This document shows electrostatic discharge protection circuits. It also provides circuit and bus driver examples of partial system power down and curren

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制造商分类

  • Semiconductors> Space & High Reliability> Logic Products> Gate Products