Datasheet Texas Instruments XLMG3410RWHT — 数据表

Order
Now Product
Folder Technical
Documents Support &
Community Tools &
Software LMG3410
SNOSD10C – APRIL 2016 – REVISED NOVEMBER 2017 1 Features 3 Description The LMG3410 Single-Channel Gallium-Nitride (GaN)
Power Stage contains a 70-mО©, 600-V GaN power
transistor, an optimized driver, and built-in protection,
in a low inductance 8-mm by 8-mm QFN package.
The LMG3410 power stage coupled with TI's analog
and digital power-conversion controllers enables
designers to create smaller, more efficient and
higher-performing designs compared to silicon FETbased solutions. These benefits are especially
important in isolated high-voltage industrial, telecom,
enterprise computing and renewable energy
applications. 1 70-mО©, 600-V GaN Power Stage for 12A
Operation
Integrated Gate Driver
– Zero Common Source Inductance
– 20-ns Propagation Delay
– 1MHz Operation
– Only Single +12V Unregulated Supply Needed …