Datasheet Texas Instruments LMG1205 — 数据表
| 制造商 | Texas Instruments |
| 系列 | LMG1205 |
用于增强模式GaN FET的100V，1.2A，5A，半桥栅极驱动器
数据表
LMG1205 100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs datasheet
PDF, 2.0 Mb, 档案已发布: Mar 22, 2017
从文件中提取
状态
| LMG1205YFXR | LMG1205YFXT | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | Yes |
打包
| LMG1205YFXR | LMG1205YFXT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 12 | 12 |
| Package Type | YFX | YFX |
| Industry STD Term | DSBGA | DSBGA |
| JEDEC Code | R-XBGA-N | R-XBGA-N |
| Package QTY | 3000 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | 1205 | 1205 |
| Thickness (mm) | .42 | .42 |
| Pitch (mm) | .4 | .4 |
| Max Height (mm) | .675 | .675 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | LMG1205YFXR | LMG1205YFXT |
|---|---|---|
| Bus Voltage, V | 90 | 90 |
| Driver Configuration | Dual, Independent | Dual, Independent |
| Fall Time, ns | 3.5 | 3.5 |
| Input Threshold | TTL | TTL |
| Input VCC(Max), V | 5.5 | 5.5 |
| Input VCC(Min), V | 4.5 | 4.5 |
| Number of Channels | 2 | 2 |
| Operating Temperature Range, C | -40 to 125 | -40 to 125 |
| Package Group | DSBGA | DSBGA |
| Package Size: mm2:W x L, PKG | See datasheet (DSBGA) | See datasheet (DSBGA) |
| Peak Output Current, A | 5 | 5 |
| Power Switch | MOSFET,GaNFET | MOSFET,GaNFET |
| Prop Delay, ns | 35 | 35 |
| Rating | Catalog | Catalog |
| Rise Time, ns | 7 | 7 |
生态计划
| LMG1205YFXR | LMG1205YFXT | |
|---|---|---|
| RoHS | Compliant | Compliant |
模型线
系列: LMG1205 (2)
制造商分类
- Semiconductors> Power Management> Gallium Nitride (GaN)В Solutions> GaN FET Drivers