Datasheet Texas Instruments LM5113QDPRRQ1 — 数据表
| 制造商 | Texas Instruments |
| 系列 | LM5113-Q1 |
| 零件号 | LM5113QDPRRQ1 |
用于增强模式GaN FET 10-WSON的100V 1.2A / 5A汽车半桥栅极驱动器-40至125
数据表
LM5113-Q1 100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs datasheet
PDF, 2.3 Mb, 档案已发布: Mar 19, 2017
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价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
打包
| Pin | 10 |
| Package Type | DPR |
| Industry STD Term | WSON |
| JEDEC Code | S-PDSO-N |
| Package QTY | 4500 |
| Carrier | LARGE T&R |
| Device Marking | L5113Q |
| Width (mm) | 4 |
| Length (mm) | 4 |
| Thickness (mm) | .75 |
| Pitch (mm) | .8 |
| Max Height (mm) | .8 |
| Mechanical Data | 下载 |
参数化
| Bus Voltage | 90 V |
| Driver Configuration | Dual Independent |
| Fall Time | 3.5 ns |
| Input Threshold | TTL |
| Input VCC(Max) | 5.5 V |
| Input VCC(Min) | 4.5 V |
| Number of Channels | 2 |
| Operating Temperature Range | -40 to 125 C |
| Package Group | WSON |
| Package Size: mm2:W x L | See datasheet (WSON) PKG |
| Peak Output Current | 5 A |
| Power Switch | MOSFET,GaNFET |
| Prop Delay | 30 ns |
| Rating | Automotive |
| Rise Time | 7 ns |
生态计划
| RoHS | Compliant |
设计套件和评估模块
- Evaluation Modules & Boards: LM5113LLPEVB
LM5113 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs Evaluation Module
Lifecycle Status: Active (Recommended for new designs)
模型线
系列: LM5113-Q1 (1)
- LM5113QDPRRQ1
制造商分类
- Semiconductors > Power Management > Gallium Nitride (GaN)В Solutions > GaN FET Drivers