Datasheet Texas Instruments ISO5852S-Q1 — 数据表
| 制造商 | Texas Instruments |
| 系列 | ISO5852S-Q1 |
具有分离输出和保护功能的高CMTI 2.5A / 5A隔离式IGBT，MOSFET栅极驱动器
数据表
ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features datasheet
PDF, 1.7 Mb, 修订版: A, 档案已发布: Dec 22, 2016
从文件中提取
状态
| ISO5852SQDWQ1 | ISO5852SQDWRQ1 | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes | No |
打包
| ISO5852SQDWQ1 | ISO5852SQDWRQ1 | |
|---|---|---|
| N | 1 | 2 |
| Pin | 16 | 16 |
| Package Type | DW | DW |
| Industry STD Term | SOIC | SOIC |
| JEDEC Code | R-PDSO-G | R-PDSO-G |
| Package QTY | 40 | 2000 |
| Carrier | TUBE | LARGE T&R |
| Device Marking | ISO5852SQ | ISO5852SQ |
| Width (mm) | 7.5 | 7.5 |
| Length (mm) | 10.3 | 10.3 |
| Thickness (mm) | 2.35 | 2.35 |
| Pitch (mm) | 1.27 | 1.27 |
| Max Height (mm) | 2.65 | 2.65 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | ISO5852SQDWQ1 | ISO5852SQDWRQ1 |
|---|---|---|
| DIN V VDE V 0884-10 Working Voltage, Vpk | 2121 | 2121 |
| DIN V VDE V 0884-10 Transient Overvoltage Rating, Vpk | 8000 | 8000 |
| Enable/Disable Function | N/A | N/A |
| Input VCC(Max), V | 5.5 | 5.5 |
| Input VCC(Min), V | 2.25 | 2.25 |
| Isolation Rating, Vrms | 5700 | 5700 |
| Number of Channels | 1 | 1 |
| Operating Temperature Range, C | -40 to 125 | -40 to 125 |
| Output VCC/VDD(Max), V | 30 | 30 |
| Output VCC/VDD(Min), V | 15 | 15 |
| Package Group | SOIC | SOIC |
| Package Size: mm2:W x L, PKG | 16SOIC: 106 mm2: 10.3 x 10.3(SOIC) | 16SOIC: 106 mm2: 10.3 x 10.3(SOIC) |
| Peak Output Current, A | 5 | 5 |
| Power Switch | IGBT | IGBT |
| Prop Delay, ns | 110 | 110 |
| Prop Delay(Max), ns | 110 | 110 |
生态计划
| ISO5852SQDWQ1 | ISO5852SQDWRQ1 | |
|---|---|---|
| RoHS | Compliant | Compliant |
模型线
系列: ISO5852S-Q1 (2)
制造商分类
- Semiconductors> Isolation> Isolated Gate Driver