Datasheet Texas Instruments CSD88537ND — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD88537ND |
60V双路N沟道NexFET功率MOSFET，CSD88537ND
数据表
CSD88537ND Dual 60-V N-Channel NexFET Power MOSFET datasheet
PDF, 412 Kb, 修订版: A, 档案已发布: Aug 25, 2014
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状态
| CSD88537ND | CSD88537NDT | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | Yes |
打包
| CSD88537ND | CSD88537NDT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | D | D |
| Industry STD Term | SOIC | SOIC |
| JEDEC Code | R-PDSO-G | R-PDSO-G |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | 88537N | 88537N |
| Width (mm) | 3.91 | 3.91 |
| Length (mm) | 4.9 | 4.9 |
| Thickness (mm) | 1.58 | 1.58 |
| Pitch (mm) | 1.27 | 1.27 |
| Max Height (mm) | 1.75 | 1.75 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | CSD88537ND | CSD88537NDT |
|---|---|---|
| Configuration | Dual | Dual |
| ID, Silicon limited at Tc=25degC, A | 16 | 16 |
| IDM, Max Pulsed Drain Current(Max), A | 62 | 62 |
| Logic Level | No | No |
| Operating Temperature Range, C | -55 to 150 | -55 to 150 |
| Package, mm | SO-8 | SO-8 |
| QG Typ, nC | 14 | 14 |
| QGD Typ, nC | 2.3 | 2.3 |
| QGS Typ, nC | 4.6 | 4.6 |
| RDS(on) Typ at VGS=10V(Typ), mOhm | 12.5 | 12.5 |
| Rating | Catalog | Catalog |
| Rds(on) Max at VGS=10V, mOhms | 15 | 15 |
| VDS, V | 60 | 60 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 3 | 3 |
生态计划
| CSD88537ND | CSD88537NDT | |
|---|---|---|
| RoHS | Compliant | Compliant |
模型线
系列: CSD88537ND (2)
制造商分类
- Semiconductors> Motor Drivers> N-Channel MOSFET