Datasheet Texas Instruments 74ACT11030D — 数据表

制造商Texas Instruments
系列74ACT11030
零件号74ACT11030D
Datasheet Texas Instruments 74ACT11030D

8输入正与非门14-SOIC -40至85

数据表

8-Input Positive-NAND Gates datasheet
PDF, 387 Kb, 档案已发布: Apr 1, 1993
从文件中提取

价格

状态

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityNo

打包

Pin14
Package TypeD
Industry STD TermSOIC
JEDEC CodeR-PDSO-G
Package QTY50
CarrierTUBE
Device MarkingACT11030
Width (mm)3.91
Length (mm)8.65
Thickness (mm)1.58
Pitch (mm)1.27
Max Height (mm)1.75
Mechanical Data下载

参数化

Bits1
F @ Nom Voltage(Max)90 Mhz
ICC @ Nom Voltage(Max)0.04 mA
Operating Temperature Range-40 to 85 C
Output Drive (IOL/IOH)(Max)24/-24 mA
Package GroupSOIC
Package Size: mm2:W x L14SOIC: 52 mm2: 6 x 8.65(SOIC) PKG
RatingCatalog
Schmitt TriggerNo
Technology FamilyACT
VCC(Max)5.5 V
VCC(Min)4.5 V
Voltage(Nom)5 V
tpd @ Nom Voltage(Max)8.7 ns

生态计划

RoHSCompliant

应用须知

  • Selecting the Right Level Translation Solution (Rev. A)
    PDF, 313 Kb, 修订版: A, 档案已发布: Jun 22, 2004
    Supply voltages continue to migrate to lower nodes to support today's low-power high-performance applications. While some devices are capable of running at lower supply nodes others might not have this capability. To haveswitching compatibility between these devices the output of each driver must be compliant with the input of the receiver that it is driving. There are several level-translati
  • TI IBIS File Creation Validation and Distribution Processes
    PDF, 380 Kb, 档案已发布: Aug 29, 2002
    The Input/Output Buffer Information Specification (IBIS) also known as ANSI/EIA-656 has become widely accepted among electronic design automation (EDA) vendors semiconductor vendors and system designers as the format for digital electrical interface data. Because IBIS models do not reveal proprietary internal processes or architectural information semiconductor vendors? support for IBIS con
  • Understanding and Interpreting Standard-Logic Data Sheets (Rev. C)
    PDF, 614 Kb, 修订版: C, 档案已发布: Dec 2, 2015
  • Semiconductor Packing Material Electrostatic Discharge (ESD) Protection
    PDF, 337 Kb, 档案已发布: Jul 8, 2004
    Forty-eight-pin TSSOP components that were packaged using Texas Instruments (TI) standard packing methodology were subjected to electrical discharges between 0.5 and 20 kV as generated by an IEC ESD simulator to determine the level of ISD protection provided by the packing materials. The testing included trays tape and reel and magazines. Additional units were subjected to the same discharge
  • Introduction to Logic
    PDF, 93 Kb, 档案已发布: Apr 30, 2015
  • Implications of Slow or Floating CMOS Inputs (Rev. D)
    PDF, 260 Kb, 修订版: D, 档案已发布: Jun 23, 2016
  • CMOS Power Consumption and CPD Calculation (Rev. B)
    PDF, 89 Kb, 修订版: B, 档案已发布: Jun 1, 1997
    Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. As a result CMOS devices are best known for low power consumption. However for minimizing the power requirements of a board or a system simply knowing that CMOS devices may use less power than equivale
  • Designing With Logic (Rev. C)
    PDF, 186 Kb, 修订版: C, 档案已发布: Jun 1, 1997
    Data sheets which usually give information on device behavior only under recommended operating conditions may only partially answer engineering questions that arise during the development of systems using logic devices. However information is frequently needed regarding the behavior of the device outside the conditions in the data sheet. Such questions might be:?How does a bus driver behave w
  • Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc
    PDF, 43 Kb, 档案已发布: Apr 1, 1996
    Though low power consumption is a feature of CMOS devices sometimes this feature does not meet a designer?s system power supply constraints. Therefore a partial system power down or multiple Vcc supplies are used to meet the needs of the system. This document shows electrostatic discharge protection circuits. It also provides circuit and bus driver examples of partial system power down and curren

模型线

制造商分类

  • Semiconductors > Logic > Gate > NAND Gate