Datasheet Texas Instruments THS4631DR — 数据表
| 制造商 | Texas Instruments |
| 系列 | THS4631 |
| 零件号 | THS4631DR |
高速FET输入运算放大器8-SOIC -40至85
数据表
High-Voltage High Slew Rate Wideband FET-Input Op Amp datasheet
PDF, 1.4 Mb, 修订版: B, 档案已发布: Aug 17, 2011
从文件中提取
价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
打包
| Pin | 8 |
| Package Type | D |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | 4631 |
| Width (mm) | 3.91 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1.58 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.75 |
| Mechanical Data | 下载 |
参数化
| 2nd Harmonic | 76 dBc |
| 3rd Harmonic | 94 dBc |
| @ MHz | 5 |
| Acl, min spec gain | 1 V/V |
| Additional Features | N/A |
| Architecture | FET,Voltage FB |
| BW @ Acl | 325 MHz |
| CMRR(Min) | 86 dB |
| CMRR(Typ) | 95 dB |
| GBW(Typ) | 325 MHz |
| Input Bias Current(Max) | 100 pA |
| Iq per channel(Max) | 13 mA |
| Iq per channel(Typ) | 11.5 mA |
| Number of Channels | 1 |
| Offset Drift(Typ) | 2.5 uV/C |
| Operating Temperature Range | -40 to 85 C |
| Output Current(Typ) | 95 mA |
| Package Group | SOIC |
| Package Size: mm2:W x L | 8SOIC: 29 mm2: 6 x 4.9(SOIC) PKG |
| Rail-to-Rail | No |
| Rating | Catalog |
| Slew Rate(Typ) | 1000 V/us |
| Total Supply Voltage(Max) | 32 +5V=5, +/-5V=10 |
| Total Supply Voltage(Min) | 10 +5V=5, +/-5V=10 |
| Vn at 1kHz(Typ) | 7 nV/rtHz |
| Vn at Flatband(Typ) | 7 nV/rtHz |
| Vos (Offset Voltage @ 25C)(Max) | 0.5 mV |
生态计划
| RoHS | Compliant |
设计套件和评估模块
- Evaluation Modules & Boards: THS4631DGNEVM
THS4631DGNEVM Evaluation Module
Lifecycle Status: Active (Recommended for new designs) - Evaluation Modules & Boards: THS4631DDAEVM
THS4631DDAEVM Evaluation Module
Lifecycle Status: Active (Recommended for new designs)
应用须知
- Transimpedance Considerations for High-Speed Operational AmplifiersPDF, 193 Kb, 档案已发布: Nov 22, 2009
Designing high-resolution detection circuits using photodiodes presents considerable challenges because bandwidth, gain, and input-referred noise are coupled together. This application note reviews the basic issues of transimpedance design, provides a set of detailed design equations, explains those equations, and develops an approach to easily compare potential solutions. - Transimpedance Amplifiers (TIA): Choosing the Best Amplifier for the job (Rev. A)PDF, 153 Kb, 修订版: A, 档案已发布: May 16, 2017
This application note is intended as a guide for the designer looking to amplify the small signal from a photodiode or avalanche diode so that it would be large enough for further processing (e.g. data acquisition) or to trigger some other event in a system. The challenge in doing so, as always, is to not degrade the signal such that it becomes indistinguishable from random noi - Noise Analysis for High Speed Op Amps (Rev. A)PDF, 256 Kb, 修订版: A, 档案已发布: Jan 17, 2005
As system bandwidths have increased an accurate estimate of the noise contribution for each element in the signal channel has become increasingly important. Many designers are not however particularly comfortable with the calculations required to predict the total noise for an op amp or in the conversions between the different descriptions of noise. Considerable inconsistency between manufactu
模型线
系列: THS4631 (9)
制造商分类
- Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > High-Speed Op Amps (>=50MHz)