Datasheet Texas Instruments LPC660IMX — 数据表
| 制造商 | Texas Instruments |
| 系列 | LPC660 |
| 零件号 | LPC660IMX |
低功耗CMOS四路运算放大器14-SOIC -40至85
数据表
LPC660 Low Power CMOS Quad Operational Amplifier datasheet
PDF, 1.3 Mb, 修订版: D, 档案已发布: Mar 19, 2013
从文件中提取
价格
状态
| Lifecycle Status | NRND (Not recommended for new designs) |
| Manufacture's Sample Availability | No |
打包
| Pin | 14 |
| Package Type | D |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Device Marking | LPC660IM |
| Width (mm) | 3.91 |
| Length (mm) | 8.65 |
| Thickness (mm) | 1.58 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.75 |
| Mechanical Data | 下载 |
替代品
| Replacement | LPC660IMX/NOPB |
| Replacement Code | S |
参数化
| Additional Features | N/A |
| Approx. Price (US$) | 1.35 | 1ku |
| Architecture | CMOS |
| CMRR(Min)(dB) | 63 |
| CMRR(Typ)(dB) | 83 |
| GBW(Typ)(MHz) | 0.35 |
| Input Bias Current(Max)(pA) | 20 |
| Iq per channel(Max)(mA) | 0.05 |
| Iq per channel(Typ)(mA) | 0.04 |
| Number of Channels(#) | 4 |
| Operating Temperature Range(C) | -40 to 85 |
| Output Current(Typ)(mA) | 21 |
| Package Group | SOIC |
| Package Size: mm2:W x L (PKG) | 14SOIC: 52 mm2: 6 x 8.65(SOIC) |
| Rail-to-Rail | In to V- Out |
| Rating | Catalog |
| Slew Rate(Typ)(V/us) | 0.11 |
| Total Supply Voltage(Max)(+5V=5, +/-5V=10) | 15 |
| Total Supply Voltage(Min)(+5V=5, +/-5V=10) | 5 |
| Vn at 1kHz(Typ)(nV/rtHz) | 42 |
| Vos (Offset Voltage @ 25C)(Max)(mV) | 3 |
生态计划
| RoHS | Not Compliant |
| Pb Free | No |
应用须知
- AN-856 A SPICE Comp Macromodel for CMOS Op Amplifiers (Rev. C)PDF, 203 Kb, 修订版: C, 档案已发布: May 6, 2013
A SPICE macromodel that captures the “personality” of Texas Instruments CMOS op-amps has beendeveloped. The salient features of the macromodel are a MOSFET input stage, Miller compensation, anda current-source output stage. A description of the model is provided along with correlation to actualdevice behavior.
模型线
系列: LPC660 (5)
制造商分类
- Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > Precision Op Amps